Improved sub-threshold slope in short-channel vertical MOSFETs using FILOX oxidation
نویسندگان
چکیده
منابع مشابه
Improved sub-threshold slope in short-channel vertical MOSFETs using FILOX oxidation
This paper investigates the origins of sub-threshold slope degradation in vertical MOSFETs (v-MOSFETs) due to dry etching of the polysilicon surround gate. Control v-MOSFETs exhibit a degradation of subthreshold slope as the channel length is reduced from 250 to 100 nm, with 100 nm transistors having a value of 125 mV/dec and a DIBL of 210 mV/V. The effect of the polysilicon gate etch is invest...
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 2009
ISSN: 0038-1101
DOI: 10.1016/j.sse.2009.02.016